The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
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DOI：
10.1080/10420150.2019.1703114
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发表时间：
2020-01
影响因子：
1
通讯作者：
Shanbin Xi;Qiwen Zheng;Wu Lu;Jiangwei Cui;Ying Wei;Bao-Shun Wang;Q. Guo
中科院分区：
文献类型：
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作者：
Shanbin Xi;Qiwen Zheng;Wu Lu;Jiangwei Cui;Ying Wei;Bao-Shun Wang;Q. Guo
摘要在0.13 μm H栅部分耗尽绝缘体上硅工艺中，观察到了宽沟道器件比窄沟道器件更易受总电离剂量影响的异常总剂量效应。测量结果和3D工艺计算机辅助设计模拟表明，具有不同沟道宽度的器件在辐照后可以表现出增强的反向窄沟道效应。这是因为在TG辐照偏置的情况下，会有一个从源极到漏极再到体区的电场，这会影响源极和漏极到埋氧层区的电场线密度。与窄沟道器件相比，宽沟道器件中从漏/源极经盒区到体区的电场所占比例更大，会产生更多的氧化物陷阱电荷，造成更大的损伤。
ABSTRACT An anomalous total dose effect that the wider channel device is more susceptible to total ionizing dose than the narrow one is observed with the 0.13 µm H-gate partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel widths may exhibit an enhanced reverse narrow channel effect after radiation. This is because in the case of bias of TG irradiation, there will be an electric field from source to drain to the body area, which will affect the electric field linear density of the source and drain to the buried oxygen layer area. Compared with narrow-channel devices, the electric field from drain/source to body region via box region of wide-channel devices accounts for a larger proportion, and the more oxide trap charges will be generated, which will cause greater damage.