Laser annealing of SiO2 film deposited by ICPECVD for fabrication of silicon based low loss waveguide
Laser annealing of SiO2 film deposited by ICPECVD for fabrication of silicon based low loss waveguide
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ICPECVD 沉积 SiO2 薄膜的激光退火用于制造硅基低损耗波导
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Hongtao Li
中科院分区：
文献类型：
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作者：
Ya’nan Wang;Yi Luo;Changzheng Sun;B. Xiong;Jian Wang;Z. Hao;Yanjun Han;Lai Wang;Hongtao Li
研究了电感耦合等离子体增强化学气相沉积（ICPECVD）法制备的SiO2薄膜的激光退火工艺，用于制作低损耗硅基光波导。研究了激光退火对ICPECVD沉积SiO2薄膜的影响。退火样品的表面粗糙度，折射率，和蚀刻速率进行了比较与热氧化得到的SiO2膜。结果表明，激光退火可以显著改善ICPECVD沉积的SiO2薄膜的性能。用等离子体增强化学气相沉积（ICPECVD）和激光退火工艺在硅基片上制备了SiO2下包层的Al 2 O3/SiO2光波导，其传输损耗与热氧化下包层光波导相当。
Laser annealing of silicon dioxide (SiO2) film formed by inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) is studied for the fabrication of low loss silicon based waveguide. The influence of laser annealing on ICPECVD-deposited SiO2 film is investigated. The surface roughness, refractive index, and etch rate of annealed samples are compared with those of SiO2 film obtained by thermal oxidation. It is demonstrated that the performance of ICPECVD-deposited SiO2 film can be significantly improved by laser annealing. Al2O3/SiO2 waveguide has been fabricated on silicon substrate with the SiO2 lower cladding formed by ICPECVD and laser annealing process, and its propagation loss is found to be comparable with that of the waveguide with thermally oxidized lower cladding.