Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED
Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED
复制标题
单片白色 InGaN/GaN LED 的内部量子效率和可调谐色温
DOI：
--
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
E. Rafailov
中科院分区：
文献类型：
--
作者：
I. Titkov;A. Yadav;V. L. Zerova;Modestas Zulonas;A. F. Tsatsulnikov;W. Lundin;A. Sakharov;E. Rafailov
采用温变电致发光（TDEL）技术测量了双色单片白色发光二极管（LED）的内量子效率（IQE），并采用基于ABC模型的修正速率方程对IQE进行了分析。分别分析了蓝色和绿色量子威尔斯阱的外部、内部和注入效率。单片白色LED包含一个绿色InGaN量子阱和两个由GaN势垒分隔的蓝色量子阱。本文还报道了在脉冲工作模式下的相关色温（CCT）的可调行为和自加热对器件性能的影响。
Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.