Effect of cavity-layer thicknesses on two-color emission in coupled multilayer cavities with InAs quantum dots
Effect of cavity-layer thicknesses on two-color emission in coupled multilayer cavities with InAs quantum dots
复制标题
InAs量子点耦合多层腔中腔层厚度对双色发射的影响
DOI：
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
T. Isu
中科院分区：
文献类型：
--
作者：
Chiho Harayama;S. Katoh;Y. Nakagawa;Xiangmeng Lu;N. Kumagai;T. Kitada;T. Isu
在（001）GaAs衬底上生长了GaAs/AlAs耦合多层腔结构。顶部腔含有自组装的InAs量子点（QD）作为光增益材料，用于腔模光的双色发射。为了定量研究两层腔体厚度差异对器件性能的影响，在硅片上生长了具有横向厚度变化的底部腔体层。当两个腔层的光学厚度相同时，频率差最小，双色发射的强度比为1。发光强度比的解释在包含量子点的顶腔区域的电场。
A GaAs/AlAs coupled multilayer cavity structure was grown on a (001) GaAs substrate. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode light. The bottom cavity layer was grown with lateral thickness variation in the wafer to investigate the effects of the thickness difference between the two cavity layers quantitatively. The frequency difference was minimum, and the intensity ratio of the two-color emission was unity when the optical thicknesses of the two cavity layers were the same. The emission intensity ratio was explained in terms of the electric fields at the top cavity region containing the QDs.
影响因子：
3.8
作者：
Belkin, Mikhail A.;Fan, Jonathan A.;Linfield, Edmund H.
通讯作者：
Linfield, Edmund H.