Single-crystal growth of organic semiconductors
Single-crystal growth of organic semiconductors
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DOI：
10.1557/mrs.2012.308
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发表时间：
2013-01-01
期刊：
影响因子：
5
通讯作者：
Kloc, Christian
中科院分区：
文献类型：
--
作者：
Jiang, Hui;Kloc, Christian
有机单晶是有机光电子学新兴领域的一个重要组成部分，因为它们为研究有机半导体的固有物理性质提供了一个理想的平台。由于有机晶体具有低的熔化温度和高的蒸气压，并且可溶于许多有机溶剂，因此溶液和气相方法都可以用于晶体生长。单个分子的性质和分子之间的相互作用决定了哪种生长方法是特定材料的首选。具有非常低的分解或熔化温度的有机半导体可以从溶液中生长，而具有高蒸气压的半导体可以使用物理蒸气传输方法生长。使用这两种方法都可以获得高质量的晶体。多组分有机化合物的晶体生长和晶体工程是新兴的领域，可以提供各种具有不同物理性质的新材料。通过区域熔化、布里奇曼法或直拉法从熔体中生长大晶体已被用于生产用于晶片制造或大闪烁体探测器的稳定材料。本文讨论了有机半导体单晶的生长方法，目的是制备高质量的样品，用于测定有机半导体的基本性质。
Organic single crystals are an established part of the emerging field of organic optoelectronics, because they provide an ideal platform for the studies of the intrinsic physical properties of organic semiconductors. As organic crystals have low melting temperatures and high vapor pressures and are soluble in numerous organic solvents, both solution and gas-phase methods can be used for crystal growth. The nature of the individual molecules and the interactions between molecules determine which growth method is preferred for particular materials. Organic semiconductors with very low decomposition or melting temperatures can be grown from solutions, whereas semiconductors with high vapor pressures can be grown using physical vapor transport methods. High-quality crystals can be obtained using both methods. Crystal growth and crystal engineering of multicomponent organic compounds are emerging fields that can provide a variety of new materials with different physical properties. The growth of large crystals from the melt by zone melting, the Bridgman, or the Czochralski methods has been used to produce stable materials used in wafer manufacturing or large scintillator detectors. In this article, single-crystal growth methods for organic semiconductors are discussed with the aim of preparing high-quality specimens for determination of the basic properties of organic semiconductors.