Laser annealing of glow discharge amorphous silicon
Laser annealing of glow discharge amorphous silicon
复制标题
辉光放电非晶硅激光退火
DOI：
10.1016/0022-3093(80)90602-x
复制
发表时间：
1980
期刊：
影响因子：
--
通讯作者：
R. Ogden
中科院分区：
文献类型：
--
作者：
R. Sussmann;A. J. Harris;R. Ogden
用调Q红宝石激光器对辉光放电非晶硅层进行了退火处理。通过电子显微镜、光致发光和红外吸收研究了退火膜的性质随激光能量的变化。讨论了退火层的结构、氢含量、带隙和态密度的变化。结果发现，有相当多的相似之处之间的非晶和退火的材料。
Glow discharge amorphous silicon layers have been annealed using a Q-switched ruby laser. The properties of the annealed films were studied as a function of laser energy by means of electron microscopy, photoluminescence and infra-red absorption. The changes in structure, hydrogen content, band-gap and density of states in the annealed layers are discussed. It is found that there are considerable similarities between the amorphous and the annealed material.