Properties of low-temperature passivation of silicon with ALD Al2O3 films and their PV applications
Properties of low-temperature passivation of silicon with ALD Al2O3 films and their PV applications
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DOI：
10.1007/s13391-011-0615-8
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发表时间：
2011-06-01
影响因子：
2.4
通讯作者：
Seomoon, Kyu
中科院分区：
文献类型：
--
作者：
Kim, Kwang-Ho;Kim, Hyun-Jun;Seomoon, Kyu
采用远程等离子体原子层沉积（RPALD）技术在p型Si衬底上制备了低温沉积氧化铝（Al2O3）薄膜。RPALD技术使用替代的三甲基铝前驱体和氧自由基，为金属-绝缘体半导体（MIS）反转层太阳能电池应用获得了良好的界面性能。分别在300℃和室温下制备了超薄Al2O3（薄膜厚度为1 ~ 6 nm）栅极介质和SiNx薄膜的Si MIS电容器。低温沉积的Al2O3和SiNx薄膜的电学性能包括电容电压（C-V）和电流电压（I-V）。利用1 MHz频率的C-V曲线得到了有SiNx膜和无SiNx膜的MIS电容器的界面态密度（D-it）。利用超薄RPALD Al2O3、rpt溅射SiNx薄膜和简单的加工工艺，在1 ~ 10 Omega a中心点cm的p-Si晶片上制备了MIS太阳能电池。采用钝化Al2O3和SiNx薄膜制备的MIS太阳能电池效率为8.21%。
Low-temperature-deposited aluminium oxide (Al2O3) thin films were grown on p-type Si substrates by the remote plasma atomic layer deposition (RPALD) technique. The RPALD technique uses an alternative trimethylaluminum precursor and oxygen radicals to obtain good interface properties for metal-insulatorsemiconductor (MIS) inversion-layer solar cell applications. Si MIS capacitors with ultra-thin Al2O3 (film thickness ranges from 1 nm to 6 nm) gate dielectric and SiNx films were fabricated at 300A degrees C and at room temperature (RT), respectively. Low-temperature-deposited Al2O3 and SiNx films were characterized by electrical properties such as capacitance-voltage (C-V), and current-voltage (I-V). The interface state density (D-it) of the MIS capacitors with SiNx films and without SiNx films was derived from the 1 MHz frequency C-V curves. By using ultra-thin RPALD Al2O3, RT-sputtered SiNx films and a simple fabrication-processing sequence, MIS solar cells were fabricated on 1 Omega A center dot cm to 10 Omega A center dot cm p-Si wafers. The fabricated MIS solar cell with passivated Al2O3 and SiNx films has 8.21% efficiency.