Low-current blocking temperature writing of double barrier magnetic random access memory cells
Low-current blocking temperature writing of double barrier magnetic random access memory cells
复制标题
双势垒磁性随机存取存储单元的低电流阻断温度写入
DOI：
10.1063/1.1646211
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发表时间：
2004
影响因子：
4
通讯作者：
P. Freitas
中科院分区：
文献类型：
--
作者：
Jianguo Wang;P. Freitas
一种磁性随机存取存储器单元结构被制造，其中被钉扎层通过用穿过结的电流脉冲加热到降低的阻断温度以上而被反转，并且在外部施加场（字线）下被冷却，最小化非寻址位的半选择切换。为了改善焦耳加热并提高击穿电压，使用了双势垒结构，其中包括一个公共反铁磁层（60 A MnIr）、两个30 A钉扎CoFe层和两个包含纳米氧化物结构的自由层。封闭温度降低至120 °C。 单势垒隧道结和双势垒隧道结的TMR分别为25%，电阻×面积积分别为1.40 Ω×μm2和1.280 Ω×μm2。钉扎层写入允许定义三态存储器，但是需要破坏性读出。观察到双势垒结构的写入效率的显着改善。一个10 ns的9 mA/μm2的电流脉冲足以加热双...
A magnetic random access memory cell architecture is fabricated where the pinned layer is reversed by heating above a reduced blocking temperature with a current pulse crossing the junction, and cooled under an external applied field (word line), minimizing half-select switching of nonaddressed bits. In order to improve Joule heating and increase breakdown voltage, a double barrier structure was used, with a common antiferromagnetic layer (60 A MnIr) two pinned 30 A CoFe layers, and two free layers incorporating nanooxide structures. The blocking temperature was reduced to 120 °C. A TMR of 25% was achieved for both single barrier and double barrier tunnel junctions with resistance×area products of ∼40 Ω×μm2 and ∼280 Ω×μm2, respectively. Pinned layer writing allows the definition of a three-state memory, requiring, however, a destructive read out. A significant improvement of writing efficiency is observed with the double barrier structure. A 10 ns current pulse of 9 mA/μm2 is sufficient to heat the double...