Very high efficiency V-band power InP HEMT MMICs
Very high efficiency V-band power InP HEMT MMICs
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非常高效的 V 波段功率 InP HEMT MMIC
DOI：
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发表时间：
2000
影响因子：
4.9
通讯作者：
J. Heaton
中科院分区：
文献类型：
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作者：
W. Kong;S.C. Wang;Pane;Der;Kuichul Hwang;O. Tang;Shih;Pin Ho;K. Nichols;J. Heaton
报道了一种V波段InP HEMT MMIC的最新功率性能，该IC采用了用于减小源极电感的槽通工艺和用于均匀性和高成品率的全选择性栅极凹陷工艺。在电路中使用的0.1 /spl μ/m栅长、高性能InGaAs/InAlAs/InP HEMT显示出530 mW/mm的最大功率密度、39%的功率附加效率和7.1 dB的增益。在60 GHz时，单级单片功率放大器的输出功率为224 mW，功率放大效率为43%。相关增益为7.5 dB。这些结果是InP器件和MMIC在V波段的输出功率和效率的最佳组合，清楚地表明了InP HEMT技术在非常高效率的毫米波功率应用中的潜力。
State-of-the-art power performance of a V-band InP HEMT MMIC is reported using a slot via process for reducing source inductance and a fully selective gate recess process for uniformity and high yield. The 0.1 /spl mu/m gate length, high performance InGaAs/InAlAs/InP HEMTs that were utilized in the circuit exhibited a maximum power density of 530 mW/mm, power added efficiency of 39%, and a gain of 7.1 dB. At 60 GHz, a single-stage monolithic power amplifier achieved an output power of 224 mW with a PAE of 43%. The associated gain was 7.5 dB. These results are the best combination of output power and efficiency reported for an InP device and a MMIC at V-band, and clearly demonstrates the potential of the InP HEMT technology for very high efficiency, millimeter wave power applications.