An Improved Transfer Current Model for RF and mm-Wave SiGe(C) Heterojunction Bipolar Transistors
An Improved Transfer Current Model for RF and mm-Wave SiGe(C) Heterojunction Bipolar Transistors
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DOI：
10.1109/ted.2014.2325493
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发表时间：
2014-06
影响因子：
3.1
通讯作者：
A. Pawlak;M. Schroter
中科院分区：
文献类型：
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作者：
A. Pawlak;M. Schroter
先进的 SiGe 异质结双极晶体管 (HBT) 工艺技术中的载流子传输表现出与带隙相关的传输效应，该效应不仅影响跨导和输出电导特性，而且难以通过紧凑模型准确描述。本文通过制定广义积分电荷控制关系 (GICCR) 的改进版本，解决了集电极电流中带隙相关效应的建模问题。因此，实验观察到的低和中电流注入时跨导的退化（这是 Ge 分级的强函数）以及输出电导可以通过简单的偏置和温度相关的 GICCR 权重因子公式来描述。衍生的配方可以无缝地融入紧凑型 HICUM/L2 中。扩展模型在较宽的偏置和温度范围内与来自不同制造商技术（包括生产和最先进的实验室工艺）的各种 SiGe HBT 的实验数据表现出极好的一致性。
The carrier transport in advanced SiGe heterojunction bipolar transistor (HBT) process technologies exhibits bandgap-related transport effects that not only impact the transconductance and output conductance characteristics, but are also difficult to describe accurately by compact models. This paper addresses the modeling of bandgap-related effects in the collector current by formulating an improved version of a generalized integral charge-control relation (GICCR). As a result, the experimentally observed degradation of the transconductance at low and medium current injection, which is a strong function of the Ge grading, as well as the output conductance are described by simple bias- and temperature-dependent formulations of the GICCR weight factors. The derived formulations fit seamlessly into the compact model HICUM/L2. The extended model shows excellent agreement over a wide bias and temperature range with the experimental data of a large variety of SiGe HBTs from technologies of different manufacturers, including production and most advanced lab processes.