Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities
Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities
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DOI:
10.1038/s41467-020-18122-3
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发表时间:
2020-08-31
影响因子:
16.6
通讯作者:
Lee, Mark
中科院分区:
文献类型:
--
作者:
Dhawan, Ruchika;Madusanka, Prabuddha;Lee, Mark
Microelectronic thermoelectric generators are one potential solution to energizing energy autonomous electronics, such as internet-of-things sensors, that must carry their own power source. However, thermoelectric generators with the mm(2) footprint area necessary for on-chip integration made from high thermoelectric figure-of-merit materials have been unable to produce the voltage and power levels required to run Si electronics using common temperature differences. We present microelectronic thermoelectric generators using Si0.97Ge0.03, made by standard Si processing, with high voltage and power generation densities that are comparable to or better than generators using high figure-of-merit materials. These Si-based thermoelectric generators have