Terahertz emission from electrically pumped gallium doped silicon devices
Terahertz emission from electrically pumped gallium doped silicon devices
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DOI：
10.1063/1.1808878
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发表时间：
2004-10
影响因子：
4
通讯作者：
P. Lv;R. Troeger;Sangcheol Kim;S. Ray;K. Goossen;J. Kolodzey;I. Yassievich;M. Odnoblyudov;M. Kag
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文献类型：
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作者：
P. Lv;R. Troeger;Sangcheol Kim;S. Ray;K. Goossen;J. Kolodzey;I. Yassievich;M. Odnoblyudov;M. Kag
用掺镓硅制作了电流泵浦太赫兹(THz)发射器件。在峰值泵浦电流为400 mA时，时间分辨峰值功率为12μW/面，在30K附近观察到发射。光谱在7.9-8.5太赫兹和13.2-13.8太赫兹两个不同的系列中出现。这是由于空穴从1Γ8激发态的分裂子能级到1Γ8+基态和1Γ7+基态的子能级的辐射跃迁，导致两个基态之间的能量间隔为22±0.07 meV。这些结果表明，基于Ga杂质跃迁的发射体开辟了太赫兹频率范围，其光谱性质有助于加深对杂质能级物理的理解。
Current pumped terahertz (THz) emitting devices have been fabricated from gallium doped silicon. The time resolved peak power was 12μW per facet at a peak pumping current of 400mA, and the emission was observed up to temperatures near 30K. The spectra occurred in two distinct series at 7.9–8.5THz, and at 13.2–13.8THz. The emission was attributed to the radiative transitions of holes from the split sublevels of the 1Γ8 excited state to the sublevels of the 1Γ8+ ground state and the 1Γ7+ ground state, yielding an energy separation of 22±0.07meV between the two ground states. These results indicated that emitters based on Ga impurity transitions open up a range of THz frequencies, and the properties of their spectra can improve the understanding of impurity level physics.