Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
复制标题
退火后浮栅对AlGaN/GaN异质结构场效应晶体管性能的影响
DOI：
10.1088/1674-1056/26/12/127102
复制
发表时间：
2017
影响因子：
1.7
通讯作者：
Yuanjie Lv
中科院分区：
文献类型：
--
作者：
Peng Cui;Zhaojun Lin;Chen Fu;Yan Liu;Yuanjie Lv
制作了不同浮栅长度和不同退火温度的AlGaN/GaN异质结场效应晶体管。利用测量的AlGaN栅肖特基接触的电容-电压曲线，
AlGaN/GaN heterostructure field-effect transistors (HFETs) with different floating gate lengths and floating gates annealed at different temperatures, are fabricated. Using the measured capacitance–voltage curves of the gate Shottky contacts for the AlGaN