Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process
Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process
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DOI：
10.1016/j.vacuum.2021.110735
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发表时间：
2021-11
期刊：
影响因子：
4
通讯作者：
Donglin Huang;Ruoyun Ji;Liqiang Yao;J. Jiao;Xiaoqiang Chen;Cheng Li;Wei Huang;Songyan Chen
中科院分区：
文献类型：
--
作者：
Donglin Huang;Ruoyun Ji;Liqiang Yao;J. Jiao;Xiaoqiang Chen;Cheng Li;Wei Huang;Songyan Chen
