Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion
Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion
复制标题
通过结合 N2O 氧化和硼扩散改进 4H-SiC N-MOSFET 界面钝化
DOI：
10.4028/www.scientific.net/msf.897.352
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
P. Godignon
中科院分区：
文献类型：
--
作者：
M. Cabello;V. Soler;N. Mestres;J. Montserrat;J. Rebollo;J. Millán;P. Godignon
本文提出了一种新的氧化层结构，用于研制高迁移率的4 H-SiC横向MOSFET。该氧化物是通过在N2 O环境中的快速热氧化（RTO）、硼扩散到SiO2中以及PECVD TEOS沉积氧化物来组成的，以改善界面质量。所获得的MOSFET显示出非常高的高峰场效应迁移率范围从80到超过170 cm 2 V-1 s-1的MOSFET具有更高的沟道长度比测试的晶体管。氧化物和SiC表面的物理（西姆斯）和电学分析表明，硼没有扩散到SiC中。这很可能是由于在N2 O氧化过程中产生的界面处的高浓度氮。
A new oxide configuration for the development of high mobility 4H-SiC lateral MOSFETs is proposed in this work. The oxide is composed by a rapid thermal oxidation (RTO) in N2O environment, a Boron diffusion into the SiO2 and a PECVD TEOS deposited oxide, in order to improve the interface quality. The obtained MOSFETs show very high peak field effect mobilities ranging from 80 up to more than 170 cm2V-1s-1 in MOSFETs with higher channel length than the tested transistors. The physical (SIMS) and electrical analysis of the oxide and SiC surface reveals that the Boron has not diffused into the SiC. This is most probably due to the high concentration of Nitrogen at the interface generated during the N2O oxidation.