Metal-to-insulator transition and superconductivity in boron-doped diamond
Metal-to-insulator transition and superconductivity in boron-doped diamond
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DOI：
10.1098/rsta.2007.2151
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发表时间：
2008-01-28
期刊：
影响因子：
5
通讯作者：
Klein, T.
中科院分区：
文献类型：
--
作者：
Bustarret, E.;Achatz, P.;Klein, T.
掺硼金刚石中超导性的实验发现对金刚石和超导材料界来说都是一个重大的惊喜。综述了单晶金刚石薄膜的主要实验结果，并将其应用于计算，指出了一些有待解决的问题。发现金属到绝缘体过渡（MIT）的临界掺杂与超导性发生的必要掺杂是一致的。我们确定了一些临界指数，发现超导金刚石在脏极限下遵循常规的II型行为，具有相对较高的临界温量值，非常接近掺杂诱导的绝缘体到金属的转变。这表明在金属方面，电子-声子耦合和筛选参数都取决于硼的浓度。我们认为，掺杂金刚石是研究电子相变的一个潜在的模型系统，也是锗和硅等其他半导体的一个激励例子。
The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.