Avalanche multiplication characteristics of Al0.8Ga0.2As diodes
Avalanche multiplication characteristics of Al0.8Ga0.2As diodes
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Al0.8Ga0.2As二极管的雪崩倍增特性
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
G. Hill
中科院分区：
文献类型：
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作者：
B. K. Ng;J. David;S. Plimmer;G. Rees;R. C. Tozer;M. Hopkinson;G. Hill
Al0.8Ga 0.2As 的雪崩倍增特性已经在 i 区宽度 w 从 1 μm 到 0.025 μm 变化的一系列 p-i-n 和 n-i-p 二极管中进行了研究。在整个研究的电场范围内，电子电离系数 α 始终高于空穴电离系数 β。与 AlxGa1-xAs (x≤0.6) 相比，观察到非常薄的 Al0.8Ga0.2As 二极管 (w=0.025 μm) 的电子和空穴引发倍增特性之间存在显着差异。发现 w≤0.1 μm 的二极管中的死区效应可将低偏压下的倍增降低到低于体电离系数预测值。通过测量推导出与w无关的有效α和β，能够准确地再现w≥0.1μm二极管的倍增特性以及所有二极管的击穿电压。通过对死区进行简单的校正，还可以以合理的精度预测更薄的二极管的倍增特性
The avalanche multiplication characteristics of Al0.8Ga 0.2As have been investigated in a series of p-i-n and n-i-p diodes with i-region widths, w, varying from 1 μm to 0.025 μm. The electron ionization coefficient, α, is found to be consistently higher than the hole ionization coefficient, β, over the entire range of electric fields investigated. By contrast with AlxGa1-xAs (x≤0.6) a significant difference between the electron and hole initiated multiplication characteristics of very thin Al0.8Ga0.2As diodes (w=0.025 μm) was observed. Dead space effects in the diodes with w≤0.1 μm were found to reduce the multiplication at low bias below the values predicted from bulk ionization coefficients. Effective α and β that are independent of w have been deduced from measurements and are able to reproduce accurately the multiplication characteristics of diodes with w≥0.1 μm and breakdown voltages of all diodes with good accuracy. By performing a simple correction for the dead space, the multiplication characteristics of even thinner diodes were also predicted with reasonable accuracy