Blue-purplish InGaN quantum wells with shallow depth of exciton localization
Blue-purplish InGaN quantum wells with shallow depth of exciton localization
复制标题
DOI：
10.1063/1.1925314
复制
发表时间：
2005-05-09
影响因子：
4
通讯作者：
Makimoto, T
中科院分区：
文献类型：
--
作者：
Akasaka, T;Gotoh, H;Makimoto, T
对生长在不同基底层上的蓝紫色InGaN多量子威尔斯阱进行了温度依赖的时间分辨PL测量。通过使用InGaN UL，激子在低温下辐射复合，被限制在浅电势最小值（7.1 meV）中，而它们在室温附近以高发光效率辐射二维复合，从电势最小值热离域。因此，为了获得高发光效率，激子局域化不是必需的，但是重要的是通过将铟原子并入UL中来消除非辐射复合中心。(c)2005年美国物理学会。
Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs. (c) 2005 American Institute of Physics.