Fabrication of SiC-Type Films Using Low-Energy Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Subsequent Pyrolysis
Fabrication of SiC-Type Films Using Low-Energy Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Subsequent Pyrolysis
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DOI：
10.1021/acs.iecr.2c04656
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发表时间：
2023-06
期刊：
影响因子：
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通讯作者：
Bryant Nguyen;Farnaz Tabarkhoon;Nicholas A. Welchert;Sheng Hu;Malancha Gupta;T. Tsotsis
中科院分区：
文献类型：
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作者：
Bryant Nguyen;Farnaz Tabarkhoon;Nicholas A. Welchert;Sheng Hu;Malancha Gupta;T. Tsotsis
碳化硅（SiC）是一种有前途的材料，可用于生物医学、航空航天和能源行业的各种应用。溶液相技术长期以来一直用于在热解成SiC之前沉积存款前体膜，但它们往往面临衬底相容性和使用有毒溶剂的困难。在这项研究中，我们介绍了一种无溶剂的合成路线，通过沉积有机硅共聚物聚（乙烯基苯基二甲基硅烷-co-二乙烯基苯）（p（VPDMS-co-DVB））膜，使用低能量等离子体化学气相沉积（PECVD），随后热解制备SiC型薄膜。在原位热解过程中，作为温度的函数，使用漫反射红外傅里叶变换光谱（DRIFTS）的膜的化学结构进行了系统的研究。发现大多数官能团在800 °C的温度下消失，大部分质量损失发生在350和520 °C之间。使用热重分析（TGA）来测量随着热解温度增加的质量损失，并将观察到的热解速率与来自DRIFTS分析的此类速率的估计值进行比较。我们提出的合成路线提供了一个可扩展的和无溶剂的方法生产SiC型陶瓷薄膜，如高温传感器和膜的应用。
Silicon carbide (SiC) is a promising material for a variety of applications in the biomedical, aerospace, and energy industries. Solution-phase techniques have long been used to deposit precursor films prior to pyrolysis into SiC, but they tend to face difficulties with substrate compatibility and the use of toxic solvents. In this study, we introduce a solventless synthesis route for fabricating SiC-type films by depositing an organosilicon copolymer poly(vinylphenyldimethylsilane-co-divinylbenzene) (p(VPDMS-co-DVB)) film using low-energy plasma chemical vapor deposition (PECVD) followed by subsequent pyrolysis. The chemical structure of the film was systematically studied in situ during pyrolysis as a function of temperature using diffuse reflection infrared Fourier transform spectroscopy (DRIFTS). The majority of the functional groups were found to have disappeared by a temperature of 800 °C, with most of the mass loss occurring between 350 and 520 °C. Thermogravimetric analysis (TGA) was used to measure the loss of mass as the pyrolysis temperature was increased, and the observed pyrolysis rates were compared to estimates of such rates from the DRIFTS analysis. Our proposed synthesis route provides a scalable and solventless method of producing SiC-type ceramic films for such applications as high-temperature sensors and membranes.