Mechanism of Self-Epitaxy in Buffer Layer for Coated Conductors
Mechanism of Self-Epitaxy in Buffer Layer for Coated Conductors
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涂层导体缓冲层自外延机理
DOI：
10.1109/tasc.2012.2235113
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发表时间：
2013
影响因子：
1.8
通讯作者：
T. Kiss
中科院分区：
文献类型：
--
作者：
Takahiro Taneda;M. Yoshizumi;Takahiko Takahashi;Reiji Kuriki;Takaomi Shinozaki;T. Izumi;Y. Shiohara;Y. Iijima;T. Saitoh;Ryuji Yoshida;T. Kato;Tsukasa Hirayama;T. Kiss
为了阐明脉冲激光沉积CeO2的自外延机制，基于离子束辅助沉积层处理方法，推导出与衬底的假设关系：取向差角越小，晶粒尺寸越大。离子束辅助沉积MgO和LaMnO3作为CeO2沉积的衬底，使用X射线衍射和透射电子显微镜获得的微晶尺寸的面内取向差角依赖性，表明该假设是合理的。这种关系被认为是自外延的先决条件，因为具有小应变的大微晶在CeO2颗粒在其上结晶时在能量上有利。最终，它们将生长为主导颗粒，这是一种可能的自外延机制。
To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.