Thermal reaction of polycrystalline SiC with XeF2
Thermal reaction of polycrystalline SiC with XeF2
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多晶 SiC 与 XeF2 的热反应
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
K. Shobatake
中科院分区：
文献类型：
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作者：
Morimichi Watanabe;Y. Mori;H. Sakai;T. Iida;S. Koide;Eri Maeta;K. Sawabe;K. Shobatake
采用分子束四极杆质谱技术，结合飞行时间技术和非原位表面分析，即x射线光电子能谱（XPS）和扫描俄格显微镜（SAM），研究了多晶立方碳化硅（SiC）与热熔二氟化氙（XeF2）在300 ~ 900k样品温度范围内的热反应行为。在Ts=700K以上，从SiC表面解吸的反应产物被鉴定为SiF4。在700K以上，SiF4的通量强度随Ts的变化而单调增加。在Ts=700K以上，从SiC表面解吸的XeF2的通量强度减小，在Ts=900K时，约有10%的入射XeF2被热反应消耗。在本实验条件下，在m∕e=31 （CF+）、50 （CF2+）和69 （CF3+）处均未检测到属于氟化碳的离子，因此发现SiC中的C原子作为残留物存在。从碳化硅样品的XPS和SAM观测…
Studies on the thermal reaction behavior of polycrystalline cubic silicon carbide (SiC) with effusive xenon difluoride (XeF2) have been carried out over the sample temperature (Ts) range from 300to900K using molecular beam quadrupole mass spectrometry combined with a time-of-flight technique and ex situ surface analyses, i.e., x-ray photoelectron spectroscopy (XPS) and scanning Auger microscopy (SAM). Above Ts=700K, the reaction product desorbed from the SiC surface was identified as SiF4. The flux intensity of SiF4 increases monotonically as a function of Ts above 700K. The flux intensity of XeF2 desorbed from the SiC surface decreases above Ts=700K, and at Ts=900K, approximately 10% of the incident XeF2 was found to be consumed by the thermal reaction. No ions at m∕e=31 (CF+), 50 (CF2+), and 69 (CF3+) to be ascribed to carbon fluoride species were detected under the present experimental conditions, and thus C atoms in SiC were found to remain as residue. From the XPS and SAM observations of the SiC samp...