Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films
Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films
复制标题
掺铟铜薄膜抗氧化性和电学性能的增强
DOI：
10.1007/s11664-008-0394-7
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发表时间：
2008
影响因子：
2.1
通讯作者：
J. Fang
中科院分区：
文献类型：
--
作者：
C. Hsu;H. Hsieh;J. Fang
铜薄膜具有高导电性和良好的抗电迁移性，可用于先进的电子器件。但是，必须克服铜的耐腐蚀性差。这项工作阐明了使用自形成的钝化层，以防止在轻铟掺杂的铜薄膜直接沉积在玻璃基板上，并在各种氧气气氛下退火的铜氧化的可能性。所研究的薄膜的电阻率逐渐下降，因为在高温下退火的Cu膜的晶粒生长和铟的沉淀从In掺杂的Cu薄膜，所揭示的X射线衍射，四点探针测量，和透射电子显微镜。具有高铟含量的铜膜在富氧环境中退火时表现出上级钝化，但由于其高铟含量而表现出高电阻率。电和钝化性质表明，铟是一种有前途的合金元素，用于未来的金属化结构和薄膜晶体管的铜膜。
Copper thin films with high conductivity and good resistance to electromigration can be used in advanced electronic devices. However, the poor corrosion resistance of copper must be overcome. This work elucidates the possibility of using a self-forming passivation layer to prevent copper oxidation in lightly indium-doped copper thin films deposited directly on glass substrates and annealed under various oxygen atmospheres. The resistivity of the studied film declined gradually as the film was annealed at an elevated temperature because of the grain growth of the Cu film and the precipitation of indium from the In-doped Cu thin film, as revealed by X-ray diffraction, four-point probe measurements, and transmission electron microscopy. A copper film with high indium content exhibited superior passivation when the film was annealed in an oxygen-rich ambient, but it exhibited high resistivity because of its high indium content. The electrical and passivation properties demonstrated that indium is a promising alloying element for use in copper films for future metallization structures and thin-film transistors.