Dependence of giant magnetoresistance on grain size in Co/Cu multilayers.
Dependence of giant magnetoresistance on grain size in Co/Cu multilayers.
复制标题
Co/Cu 多层膜中巨磁阻对晶粒尺寸的依赖性。
DOI：
10.1103/physrevb.50.4232
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Parkin
中科院分区：
文献类型：
--
作者：
Modak;Smith;Parkin
采用相同Co和Cu厚度但不同晶粒尺寸的Co/Cu多层膜，研究了晶粒尺寸对直流磁控溅射制备Co/Cu多层膜磁阻的影响。这些多层膜是通过有或没有Cu衬底来选择性制备的：从缓冲层到超晶格的晶粒间外延有助于控制多层膜的晶粒结构。磁流变率随晶粒尺寸的增大而增大，低温时差异更大。MR的增强归因于增加的电子平均自由程导致更多的反铁磁耦合层的采样。
The effect of grain size on the magnetoresistance (MR) of Co/Cu multilayers fabricated by dc magnetron sputtering has been studied using Co/Cu multilayers grown with identical Co and Cu thicknesses but different grain sizes. These multilayers were selectively fabricated by growing with and without a Cu underlayer: grain-to-grain epitaxy from the buffer layer to the superlattice in the former facilitated control of the multilayer grain structure. The MR was found to increase with increasing grain size, with the difference being larger at low temperature. The enhancement of MR is attributed to an increased electron mean free path leading to sampling of more antiferromagnetically coupled layers.