Oxidation of SnO to SnO2 thin films in boiling water at atmospheric pressure
Oxidation of SnO to SnO2 thin films in boiling water at atmospheric pressure
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DOI：
10.1063/1.4867654
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发表时间：
2014-03-03
影响因子：
4
通讯作者：
Mitsuda, Y.
中科院分区：
文献类型：
--
作者：
Nose, K.;Suzuki, A. Y.;Mitsuda, Y.
我们证明了SnO在沸水中被氧化成SnO 2。采用脉冲激光沉积法在玻璃衬底上制备了（001）取向的SnO薄膜。在常压沸水中放置5 h，Sn的价态由（II）变为（IV）。所得SnO 2薄膜在可见光范围内的光学透明度大于95%。SnO 2薄膜具有非晶态结构，并表现出介电性能。原子力显微镜和傅立叶变换红外光谱显示颗粒状结构和-OH基团的存在，这可能是氧化剂在膜内扩散的原因。(C)2014 AIP Publishing LLC.
We demonstrated that SnO is oxidized to SnO2 in boiling water. (001)-oriented SnO thin films were pulsed-laser deposited onto a glass substrate. The Sn valence number changed from (II) to (IV) by keeping SnO films in boiling water at atmospheric pressure for 5 h. Optical transparency of the obtained SnO2 films was greater than 95% in the visible light range. The SnO2 films possessed an amorphous structure, and exhibited dielectric properties. Atomic force microscopy and Fourier transform infrared spectroscopy revealed granular structures and the existence of -OH groups, which may account for the diffusion of oxidants within the film. (C) 2014 AIP Publishing LLC.