Energy bandgap variation in oblique angle-deposited indium tin oxide
Energy bandgap variation in oblique angle-deposited indium tin oxide
复制标题
斜角沉积氧化铟锡的能带隙变化
DOI：
10.1063/1.4940998
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发表时间：
2016
影响因子：
4
通讯作者：
Jaehee Cho
中科院分区：
文献类型：
--
作者：
K. Kim;J. H. Park;Hyunsoo Kim;J. Kim;E. Schubert;Jaehee Cho
采用斜角沉积（OAD）技术制备的氧化铟锡（ITO）薄膜的结构与光学性能，特别是光学带隙能量之间存在很强的相关性。ITO薄膜的微结构特性受到OAD过程中使用的倾斜角的强烈影响。当改变倾斜角度时，由于ITO与衬底之间的界面处存在优先生长方向，ITO膜的折射率、孔隙率和光学带隙能量也发生变化。实验表明，ITO薄膜的光学带隙从3.98 eV（垂直入射）到3.87 eV（倾斜角为60°）。
Indium tin oxide (ITO) thin films deposited using the oblique angle deposition (OAD) technique exhibit a strong correlation between structural and optical properties, especially the optical bandgap energy. The microstructural properties of ITO thin films are strongly influenced by the tilt angle used during the OAD process. When changing the tilt angle, the refractive index, porosity, and optical bandgap energy of ITO films also change due to the existence of a preferential growth direction at the interface between ITO and the substrate. Experiments reveal that the ITO film's optical bandgap varies from 3.98 eV (at normal incident deposition) to 3.87 eV (at a 60° tilt angle).