A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
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室温峰谷电流比为14的赝晶In0.53Ga0.47As/AlAs谐振隧道势垒
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
S. Hiyamizu
中科院分区：
文献类型：
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作者：
T. Inata;S. Muto;Y. Nakata;S. Sasa;T. Fujii;S. Hiyamizu
研究了In 0. 53 Ga 0. 47 As基共振隧穿势垒（RTBs）的负微分电阻特性，包括与InP衬底晶格匹配的In 0. 53 Ga 0. 47 As/（In 0. 52 Al 0. 48 As）x（In 0. 53 Ga 0. 47 As）1-x RTBs和同样生长在InP衬底上的In 0. 53 Ga 0. 47 As/AlAs假晶RTBs。对于In0.53Ga0.47As（15层）/AlAs（9层）的共振隧穿势垒结构，峰谷电流比分别为14（300 K）和35（77 K），峰值电流密度为2.3× 104 A/cm 2。
We have studied the effect of barrier height on the negative differential resistance characteristics of In0.53Ga0.47As-based resonant tunneling barriers (RTBs), including In0.53Ga0.47As/(In0.52Al0.48As)x(In0.53Ga0.47As)1-x RTBs, lattice-matched to an InP substrate, and In0.53Ga0.47As/AlAs pseudomorphic RTBs also grown on InP substrates. A peak-to-valley current ratio of 14 (300 K) and 35 (77 K) with a high peak-current density of 2.3×104A/cm2 was achieved for a resonant tunneling barrier structure of In0.53Ga0.47As (15 atomic layers)/AlAs (9 atomic layers).