Ge–Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection
Ge–Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection
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DOI：
10.1063/1.3020297
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发表时间：
2008-11
影响因子：
4
通讯作者：
M. Carroll;K. Childs;R. Jarecki;T. Bauer;Kevin F. Saiz
中科院分区：
文献类型：
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作者：
M. Carroll;K. Childs;R. Jarecki;T. Bauer;Kevin F. Saiz
报道了一种锗硅分离吸收倍增雪崩光电二极管（SAM-APD）。该结构使用低温原位清洁和外延工艺生长，Tinsitu和Tetepitaxy <460°C，导致Ge层的位错密度为10.5 × 1010 cm −2。SAM-APD的响应度为3.2×10−4A scinW（1310 nm），穿通时的暗电流密度为0.2mA scincm 2。在206 K的盖革模式（GM）中，暗计数率（DCR）为1.280 kHz，这在InGaAs闪烁InP GM APD报道的DCR的数量级内，尽管Ge中的高缺陷密度。
A Ge–Si separate absorption and multiplication avalanche photodiode (SAM-APD) is reported. The structure is grown using a low temperature in situ clean and epitaxy process, Tinsitu and Tepitaxy<∼460°C, resulting in a Ge layer with a dislocation density of ∼5×1010cm−2. The SAM-APD has a responsivity of 3.2×10−4A∕W (1310nm) and a dark current density at punch-through of 0.2mA∕cm2. In Geiger mode (GM) at 206K, the dark count rates (DCRs) are ∼280kHz, which is within an order of magnitude of DCR reported for InGaAs∕InP GM APDs despite the high defect density in the Ge.