Reactions of CnFm+ Ions with C2F4 and Other Perfluorocarbons
Reactions of CnFm+ Ions with C2F4 and Other Perfluorocarbons
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CnFm 离子与 C2F4 和其他全氟化碳的反应
DOI：
10.1021/j100125a020
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Paulson
中科院分区：
文献类型：
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作者：
R. Morris;A. Viggiano;J. Paulson
摘要：含有 C2F4 的排放物中会发生多种过程，包括聚合和气态物质的产生。 C2F4 的辉光放电聚合已在商业上用于制备和沉积电容器的介电薄膜。 C2F4 辉光放电产生的薄膜具有优于传统制备的聚四氟乙烯 (PTFE) 的电性能，同时具有与传统 PTFE 光谱相似的红外光谱。有时将 C2F4 添加到等离子蚀刻中使用的其他卤化碳的放电物中，以控制蚀刻。向 CF4 等离子体中添加 C2F4 具有降低氟碳比的作用，从而影响 Si-SiO2 蚀刻速率比。当产生大量 C2F4 并在其他卤化碳气体排放中充当重组体时。
Abstract : A variety of processes, including polymerization and production of gaseous species, occur in discharges containing C2F4. Glow discharge polymerization of C2F4 has been used commercially to prepare and deposit thin dielectric films for capacitors. The C2F4 glow discharge produces films which can have electrical properties superior to those of conventionally prepared poly-(tetrafluoroethylene) (PTFE) yet have IR spectra resembling spectra of conventional PTFE. C2F4 is sometimes added to discharges of other halocarbons used in plasma etching in order to control the etching. Addition of C2F4 to a CF4 plasma has the effect of reducing the fluorine-to-carbon ratio, which affects the Si-to-SiO2 etch rate ratio. When large amounts of C2F4 is produced and acts as a recombinant in discharges of other halocarbon gases.