A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy
A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy
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DOI：
10.1016/0022-0248(94)00669-5
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发表时间：
1995-04
影响因子：
1.8
通讯作者：
R. Beanland;M. Aindow;T. Joyce;P. Kidd;M. Lourenço;P. Goodhew
中科院分区：
文献类型：
--
作者：
R. Beanland;M. Aindow;T. Joyce;P. Kidd;M. Lourenço;P. Goodhew
