Giant tunnel magnetoresistance in codeposited fullerene-cobalt films in the low bias-voltage regime
Giant tunnel magnetoresistance in codeposited fullerene-cobalt films in the low bias-voltage regime
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DOI：
10.1063/1.2822397
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发表时间：
2007-12-10
影响因子：
4
通讯作者：
Maeda, Yoshihito
中科院分区：
文献类型：
--
作者：
Sakai, Seiji;Sugai, Isamu;Maeda, Yoshihito
研究了C-60-Co共沉积薄膜在低偏压下的磁输运性质。在低温下发现了铁磁金属/有机分子体系中最高的80%的巨隧道磁电阻比（Δ R/R-max）。所观察到的偏置电压的MR比的依赖性表示由一个不寻常的指数形式，这表明近100%的MR比可以实现在低偏置电压限制。(c)2007年，美国物理学会。
Magnetotransport properties in the low bias-voltage regime were investigated for codeposited C-60-Co films. A giant tunnel magnetoresistance (MR) ratio (Delta R/R-max) of 80%, which is the highest in ferromagnetic metal/organic molecule systems, was found at low temperatures. The observed bias-voltage dependence of the MR ratio is expressed by an unusual exponential form, suggesting that the MR ratio of nearly 100% can be realized in the low bias-voltage limit. (c) 2007 American Institute of Physics.