Structural and magnetic properties of epitaxial Fe3Si/GaAs(001) hybrid structures
Structural and magnetic properties of epitaxial Fe3Si/GaAs(001) hybrid structures
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外延 Fe3Si/GaAs(001) 混合结构的结构和磁性能
DOI：
10.1116/1.1768528
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发表时间：
2004
影响因子：
1.4
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
J. Herfort;H. Schönherr;K. Friedland;K. Ploog
研究了具有高结晶度和界面完美性的 Fe3Si/GaAs(001) 杂化结构的结构、电学和磁学性质。 Fe3Si/GaAs(001) 混合结构是在 200°C 下通过分子束外延制备的。薄膜的成分可以被视为霍斯勒合金，在很宽的硅含量范围内进行调整。高结晶度和界面完美性与稳定的 Fe3Si 相相关。薄膜的电阻率在几乎精确的化学计量下显示出很强的最小值，这可以通过 Fe3Si 相内 Si 原子的完美排序来解释。这些层在室温下具有铁磁性，饱和磁化强度值接近块体 Fe3Si。这些层显示出非常小的矫顽场，这又与 Fe3Si 相内层的高结晶度和界面完美性相关。
The structural, electrical, and magnetic properties of Fe3Si/GaAs(001) hybrid structures with high crystalline and interfacial perfection are studied. The Fe3Si/GaAs(001) hybrid structures are fabricated by molecular beam epitaxy at 200 °C. The composition of the films, which can be regarded as a Heusler alloy, is tuned over a wide range of Si content. The high crystalline and interfacial perfection is correlated with the stable Fe3Si phase. The resistivity of the films shows a strong minimum at almost exact stoichiometry which can be explained by the perfection of the ordering of the Si atoms within the Fe3Si phase. The layers are ferromagnetic at room temperature with saturation magnetization values close to bulk Fe3Si. The layers show very small coercive fields which again is correlated with high crystalline and interfacial perfection of the layers within the Fe3Si phase.