1300-V 6H-SiC lateral MOSFETs with two RESURF zones
1300-V 6H-SiC lateral MOSFETs with two RESURF zones
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具有两个 RESURF 区域的 1300V 6H-SiC 横向 MOSFET
DOI：
10.1109/led.2002.803768
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发表时间：
2002
影响因子：
4.9
通讯作者：
Ronald J. Gutmann
中科院分区：
文献类型：
--
作者：
S. Banerjee;T. P. Chow;Ronald J. Gutmann
制备了一个双区、横向RESURF场6H-SiC MOSFET，击穿电压高达1300 V，比导通电阻为160 m/spl Omega//spl middot/cm/sup 2/。这些mosfet表现出稳定和可逆的击穿，表明在早期的横向SiC mosfet中没有报道过雪崩击穿。
A two-zone, lateral RESURF field 6H-SiC MOSFET with breakdown voltage as high as 1300 V and specific on-resistance of 160 m/spl Omega//spl middot/cm/sup 2/ has been fabricated. These MOSFETs exhibit stable and reversible breakdown indicating avalanche breakdown in SiC that has not been reported in earlier lateral SiC MOSFETs.