Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices
Investigation of Charge Relaxation in Silicon Nitride for the Reliability of Electrostatically Driven Capacitive MEMS Devices
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DOI：
10.1109/ted.2014.2327695
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发表时间：
2014-06
影响因子：
3.1
通讯作者：
Gang Li;Wendong Zhang;Pengwei Li;Shengbo Sang;Jie Hu;Qinghua Zhao;Xuyuan Chen
中科院分区：
文献类型：
--
作者：
Gang Li;Wendong Zhang;Pengwei Li;Shengbo Sang;Jie Hu;Qinghua Zhao;Xuyuan Chen
提出了一种用电容-电压响应模拟金属-绝缘体-半导体（MIS）结构的方法来评估静电微机电系统器件中介质充放电特性的方法。基于这种方法的分析模型已经建立。在实验中，系统地研究了MIS结构氮化硅中陷阱电荷的弛豫行为。对于正和负直流偏压极性，快速和缓慢的放电阶段，清楚地观察到在早期和晚期的电荷弛豫过程中，分别。放电比（DR）被发现依赖于两个偏置极性和幅度。结果表明，负直流偏置会导致高空穴注入水平但低DR，而正直流偏置会导致低电子注入水平但高DR，且DR随直流偏置电压的增加而增加。进一步发现，空穴弛豫比电子弛豫更快地达到稳态。为了解释实验结果，我们指出靠近界面的陷阱在介质充放电过程中起着重要的作用。
Dielectric charging/discharging in the real-life electrostatic microelectromechanical system device is proposed to be evaluated by the capacitance-voltage response for an analogous metal-insulator-semiconductor (MIS) structure. An analytical model based on this approach has been established. In the experiment, the relaxation behaviors of trapped charges in silicon nitride of MIS structure have been systematically investigated. For both positive and negative dc bias polarities, fast and slow discharge stages were clearly observed in the early and late charge relaxation processes, respectively. The discharge ratio (DR) was found to depend on both the bias polarity and magnitude. It was shown that negative dc bias would cause a high hole injection level but low DR, whereas positive dc bias would lead to a low electron injection level but high DR. Moreover, the DR will increase with the dc bias voltage. It was further found that the hole relaxation reaches the steady state faster than the electron relaxation. To explain the experimental results, we pointed out that the traps close to the interface play an important role in dielectric charging and discharging process.