Atom devices based on single dopants in silicon nanostructures.
Atom devices based on single dopants in silicon nanostructures.
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基于硅纳米结构中的单个掺杂剂的原子设备。
DOI：
10.1186/1556-276x-6-479
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发表时间：
2011-07-29
影响因子：
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通讯作者：
Tabe M
中科院分区：
文献类型：
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作者：
Moraru D;Udhiarto A;Anwar M;Nowak R;Jablonski R;Hamid E;Tarido JC;Mizuno T;Tabe M
硅场效应晶体管现在的栅极长度只有几十纳米，沟道中含有可计数的掺杂剂。这种技术趋势使我们进入了使用一种或几种掺杂原子的器件的研究阶段。在这项工作中，我们回顾了我们对具有绝缘体上硅MOSFET基本结构的关键原子器件的最新研究，例如单掺杂晶体管、初级存储器件、单电子十字转门器件和光子器件，其中单掺杂原子介导的电子隧道是基本的传输机制。此外，还提出了通过开尔文探针力显微镜对沟道中单个掺杂剂电势的观察。这些结果可能为新器件技术（即单掺杂原子电子学）的开发铺平道路。
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.