Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy
Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy
复制标题
生长速率对1450℃氢化物气相外延AlN同质外延生长的影响
DOI：
10.35848/1882-0786/ac9952
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发表时间：
2022
影响因子：
2.3
通讯作者：
J. Kotani
中科院分区：
文献类型：
--
作者：
Y. Kumagai;K. Goto;Toru Nagashima;Reo Yamamoto;M. Boćkowski;J. Kotani
研究了在1450 °C氢化物气相外延法在AlN（0001）衬底上均匀外延生长AlN的生长速率的影响。X射线衍射和拉曼光谱显示，即使当生长速率增加到超过150 μm h-1时，也可以实现与初始衬底相当的高结构质量。虽然Si杂质的浓度随着生长速率的增加而增加，但由以155.6 μm h-1生长的同质外延层制备的独立AlN衬底在207 nm处显示出陡峭的光学吸收边，并且在更长的波长处具有高的光学透射率。
The influence of growth rate on the homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy on bulk AlN(0001) substrates was studied. X-ray diffraction and Raman spectroscopy revealed that high structural quality comparable to that of the initial substrate can be achieved even when the growth rate is increased to over 150 μm h−1. Although the concentration of Si impurities increased with increasing growth rate, a freestanding AlN substrate prepared from a homoepitaxial layer grown at 155.6 μm h−1 showed a steep optical absorption edge at 207 nm and high optical transmittance at longer wavelengths.