Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy
Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy
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DOI：
10.1063/1.2719168
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发表时间：
2007-04
影响因子：
4
通讯作者：
M. Kubota;T. Onuma;A. Tsukazaki;A. Ohtomo;M. Kawasaki;T. Sota;S. Chichibu
中科院分区：
文献类型：
--
作者：
M. Kubota;T. Onuma;A. Tsukazaki;A. Ohtomo;M. Kawasaki;T. Sota;S. Chichibu
研究了在ScAlMgO4衬底上激光辅助分子束外延生长的Mg0.11Zn0.89O外延层中激子的复合动力学。采用高温退火自缓冲层，在293K时，3.6 eV的近带边光致发光峰的半高宽值从133 eV降至94 meV，近带边发射与以2.2 eV为中心的深发射带的强度比提高了3倍。同时，在1μJ/cm~2激发密度下，293K处近带边光致发光峰的寿命从49ps提高到60ps。这些结果表明，HITAB改善了合金成分的均匀性，降低了点缺陷的浓度。
Recombination dynamics of excitons in Mg0.11Zn0.89O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMgO4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6eV was decreased from 133to94meV at 293K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293K under the excitation density of 1μJ∕cm2 was increased from 49to60ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.