Thermoelectric properties of Zn4Sb3 thin films prepared by magnetron sputtering
Thermoelectric properties of Zn4Sb3 thin films prepared by magnetron sputtering
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DOI：
10.1016/s0040-6090(03)00855-1
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发表时间：
2003-10-22
期刊：
影响因子：
2.1
通讯作者：
Yamaguchi, M
中科院分区：
文献类型：
--
作者：
Zhang, LT;Tsutsui, M;Yamaguchi, M
采用磁控溅射法制备了锌、锑共沉积的锌锑薄膜，研究了薄膜的微观结构和热电性能。沉积的非晶薄膜在573K到673K之间进行了退火热处理，使其以β-Zn4Sb3的形式结晶。制备的薄膜具有较高的功率因数和较低的热导率，可以通过改变溅射功率和沉积时间来控制薄膜的微观结构。相对于化学计量比的Zn4Sb3，所研究的薄膜都是富锌的。它们的电阻率随着薄膜厚度的增加而减小，基质中的富锌颗粒变粗。它们的塞贝克系数随着电阻率的减小而减小。在适当控制薄膜厚度和微结构的情况下，可以同时获得低的电阻率和高的塞贝克系数。在类似于300 nm厚的薄膜样品中，纳米级的颗粒尺寸导致其导热系数降低近50%。对于349 nm厚的Zn4Sb3薄膜样品，在类似于460K的温度下，ZT为1.2。(C)2003爱思唯尔B.V.保留所有权利。
Microstructure and thermoelectric properties were investigated on Zn4Sb3 thin films prepared by co-deposition of Zn and Sb by magnetron sputtering. The as-deposited amorphous thin films were annealed at temperatures between 573 and 673 K so that they crystallized in the form of beta-Zn4Sb3. The Zn4Sb3 thin films have a relatively high power factor and a low thermal conductivity Microstructure of the thin films can be controlled by changing sputtering power and deposition time. The thin films investigated are all Zn-rich with respect to the stoichiometric Zn4Sb3. Their electrical resistivity decreases as film thickness increases and Zn-rich particles in the matrix grow coarse. Their Seebeck coefficient decreases as electrical resistivity decreases. Low electrical resistivity and high Seebeck coefficient can be achieved simultaneously in a film specimen with properly controlled thickness and microstructure. A nano-scale grain size in a similar to 300 nm-thick film specimen gives rise to an almost 50% reduction in its thermal conductivity. A ZT of 1.2 at similar to460 K has been obtained for a 349 nm-thick Zn4Sb3 film specimen. (C) 2003 Elsevier B.V. All rights reserved.