Ohmic contacts to n‐type silicon‐germanium
Ohmic contacts to n‐type silicon‐germanium
复制标题
n 型硅-锗的欧姆接触
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
T. Jackson
中科院分区：
文献类型：
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作者：
S. Nelson;T. Jackson
我们已经研究了n型硅/硅锗异质结构的合金金属和离子注入欧姆接触。我们发现金/锑接触会扭曲低温迁移率测量，并在短时间内严重降解样品。一种更可靠的替代合金是银/锑。我们还发现磷离子注入触点，在600°C退火30分钟后，在低温下具有可靠的欧姆和低电阻率。
We have studied both alloyed metal and ion‐implanted Ohmic contacts to n‐type silicon/silicon germanium heterostructures. We found that gold/antimony contacts can distort low temperature mobility measurements, and seriously degrade a sample after a short time. A more reliable alternative alloy is silver/antimony. We also found phosphorous ion‐implanted contacts, annealed to 600 °C for 30 min, to be reliably Ohmic and of low resistivity at low temperatures.