Electronic band structure of isotopically pure germanium: Modulated transmission and reflectivity study.
Electronic band structure of isotopically pure germanium: Modulated transmission and reflectivity study.
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同位素纯锗的电子能带结构：调制透射率和反射率研究。
DOI：
10.1103/physrevb.49.14244
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Haller
中科院分区：
文献类型：
--
作者：
Parks;Ramdas;Rodríguez;Itoh;Haller
在T=6K下测得的单同位素Ge(70)Ge、Ge(73)、Ge(Ge)、Ge(Ge)和Ge(Ge)的压调和光调制反射率谱显示出明显的${\mathit{E}}_{0}$+${\mathrm{\ensuremath{\Delta}}}_{0}$跃迁和压调反射率特征，它们的能量随同位素质量的增加而增加.通过对电调制和波长调制传输和光致发光的声子辅助间接跃迁能的比较，推导出间接带隙和相应的区界声子的同位素质量依赖关系。在电子-声子相互作用和晶格体积膨胀的背景下，解释了能隙与同位素质量的关系。
The piezomodulated and photomodulated reflectivity spectra of monoisotopic Ge ${(}^{70}$Ge, $^{73}\mathrm{Ge}$, $^{74}\mathrm{Ge}$, $^{76}\mathrm{Ge}$) and natural Ge measured at T=6 K show clear signatures of the ${\mathit{E}}_{0}$ and the ${\mathit{E}}_{0}$+${\mathrm{\ensuremath{\Delta}}}_{0}$ transitions; their energies increase with increasing isotopic mass. From a comparison of the phonon-assisted indirect transition energies obtained from electromodulated and wavelength-modulated transmission and photoluminescence, the isotopic mass dependence of both the indirect gap and the relevant zone-boundary phonons are deduced. The isotopic-mass dependence of the energy gaps is interpreted in the context of the electron-phonon interaction and the volume expansion of the crystal lattice.