Low-voltage polymer field-effect transistors gated via a proton conductor
Low-voltage polymer field-effect transistors gated via a proton conductor
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DOI：
10.1002/adma.200600871
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发表时间：
2007-01-08
影响因子：
29.4
通讯作者：
Berggren, Magnus
中科院分区：
文献类型：
--
作者：
Herlogsson, Lars;Crispin, Xavier;Berggren, Magnus
采用电解液作为栅绝缘层可以实现p沟道有机场效应晶体管(OFET)的低工作电压。然而，电解液中的可移动阴离子可能会导致通道中不受欢迎的电化学。为了避免这种情况，使用了聚阴离子电解液作为栅绝缘体。由此产生的OFET具有小于1V的工作电压(见图)，并且在环境大气中显示快速开关(小于0.3ms)。
Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.