Application of DLC films as masks for integrated circuit fabrication
Application of DLC films as masks for integrated circuit fabrication
复制标题
DOI：
10.1016/s0925-9635(02)00379-5
复制
发表时间：
2003-03-01
影响因子：
4.1
通讯作者：
Friedbacher, G
中科院分区：
文献类型：
--
作者：
Hirakuri, KK;Yoshimura, M;Friedbacher, G
为了评估类金刚石碳（DLC）膜对上述工艺的适用性，研究了这种膜对离子注入的耐久性。因此，在集成电路（IC）制造过程中，在不同的衬底温度下沉积在n型Si（111）衬底上的DLC膜暴露于硼（B）离子注入。B离子的注入在30 keV的加速电压和5 × 10（14）离子cm（-2）的剂量体积下进行。利用原子力显微镜研究了离子注入前后类金刚石薄膜的表面形貌。用傅里叶变换红外光谱仪测定了薄膜的红外光谱。用俄歇电子能谱（AES）测定了注入杂质在薄膜中的浓度和扩散深度。红外光谱表明，离子注入使DLC膜的结构发生了很大的变化。AES谱表明在DLC膜与Si衬底表面的界面处存在微量的B。用DLC膜作为掩模材料制备的优良pn结的产率被测量为沉积温度的函数。从pn结的I-V特性和成品率的结果来看，DLC膜的最佳沉积条件为400 ℃。(C)2003 Elsevier Science B. V.保留所有权利。
In order to evaluate the applicability of diamond-like carbon (DLC) films to the above-mentioned processes, the durability of such films against ion implantation has been investigated. Therefore, DLC films deposited on n-type Si(111) substrates under varying substrate temperature were exposed to boron (B) ion implantation during the integrated circuit (IC) fabrication process. The implantation of B ions was carried out at an acceleration voltage of 30 keV and a dose volume of 5 X 10(14) ion cm(-2). The surface morphology of DLC films before and after implantation was investigated by atomic force microscopy. IR spectra of the DLC films were obtained with an FTIR spectrometer. Concentration and diffusion depth of the implanted dopants in the films were determined by Auger electron spectroscopy (AES). IR spectra indicate that the structure of DLC films is greatly changed by the implantation process. AES spectra reveal the existence of traces of B at the interface between the DLC film and the Si substrate surface. The yield of excellent pn junctions prepared using DLC films as mask materials was measured as a function of the deposition temperature. From the results of I-V characteristics of pn junction and the yield, the optimum condition of the DLC film is at 400 degreesC of deposition temperature. (C) 2003 Elsevier Science B.V. All rights reserved.