Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
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DOI：
10.1088/1674-1056/24/9/096802
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发表时间：
2015-07
影响因子：
1.7
通讯作者：
Xiaoguang He;Degang Zhao;D. Jiang;Jian-jun Zhu;Ping Chen;Zongshun Liu;L. Le;Jing Yang;L. Xiaojing;Shuming Zhang;Hui Yang
中科院分区：
文献类型：
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作者：
Xiaoguang He;Degang Zhao;D. Jiang;Jian-jun Zhu;Ping Chen;Zongshun Liu;L. Le;Jing Yang;L. Xiaojing;Shuming Zhang;Hui Yang
采用金属有机气相外延法在蓝宝石衬底上生长AlGaN/AlN/GaN结构。研究了AlN层间厚度、AlGaN势垒厚度和Al组分对二维电子气（2DEG）性能的影响。在高温GaN层生长初期降低V/III比和提高反应器压力，可以延长GaN核聚结过程，有效改善晶体质量和界面形貌，减少界面粗糙度散射，提高2DEG迁移率。AlGaN/AlN/GaN结构具有2DEG片密度为1.19 × 10(13) cm(-2)，电子迁移率为2101 cm(2). v -1。s(-1)，得到249 ω的平方电阻。
AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 x 10(13) cm(-2), electron mobility of 2101 cm(2).V-1.s(-1), and square resistance of 249 Omega is obtained.