Proposal for an ultrasensitive spintronic strain and stress sensor
Proposal for an ultrasensitive spintronic strain and stress sensor
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DOI：
10.1088/0022-3727/44/20/205301
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发表时间：
2011-05
期刊：
影响因子：
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通讯作者：
J. Atulasimha;Supriyo Bandyopadhyay
中科院分区：
文献类型：
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作者：
J. Atulasimha;Supriyo Bandyopadhyay
我们提出了一种自旋电子式应变/应力传感器，该传感器能够在室温下传感应变，灵敏度为∼10−13 Hz−1/2，有源传感面积为∼1 cm~2，功率损耗为∼1 W。该器件通过监测平行的独立纳米线自旋阀阵列在承受沿纳米线长度的压应力或拉应力时自旋极化电流的变化来测量应力或应变。这种传感器可以使用各种技术来制造，包括纳米光刻、自组装和外延生长。
We propose a spintronic strain/stress sensor capable of sensing strain with a sensitivity of ∼10−13 Hz−1/2 at room temperature with an active sensing area of ∼1 cm2 and power dissipation of ∼1 W. This device measures stress or strain by monitoring the change in the spin-polarized current in a parallel array of free-standing nanowire spin valves when the array is subjected to compressive or tensile stress along the wires' length. Such a sensor can be fabricated using a variety of techniques involving nanolithography, self-assembly and epitaxial growth.