Strain-induced spontaneous Hall effect in an epitaxial thin film of a Luttinger semimetal
Strain-induced spontaneous Hall effect in an epitaxial thin film of a Luttinger semimetal
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DOI:
10.1073/pnas.1819489116
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发表时间:
2019-04-30
影响因子:
11.1
通讯作者:
Nakatsuji, Satoru
中科院分区:
文献类型:
--
作者:
Ohtsuki, Takumi;Tian, Zhaoming;Nakatsuji, Satoru
Pyrochlore iridates have provided a plethora of novel phenomena owing to the combination of topology and correlation. Among them, much attention has been paid to Pr2Ir2O7, as it is known as a Luttinger semimetal characterized by quadratic band touching at the Brillouin zone center, suggesting that the topology of its electronic states can be tuned by a moderate lattice strain and external magnetic field. Here, we report that our epitaxial Pr2Ir2O7 thin films grown by solid-state epitaxy exhibit a spontaneous Hall effect that persists up to 50 K without having spontaneous magnetization within our experimental accuracy. This indicates that the system breaks the time reversal symmetry at a temperature scale that is too high for the magnetism to be due to Pr 4f moments and must be related to magnetic order of the iridium 5d electrons. Moreover, our analysis finds that the chiral anomaly induces the negative contribution to the magnetoresistance only when a magnetic field and the electric current are parallel to each other. Our results indicate that the strained part of the thin film forms a magnetic Weyl semimetal state.