Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation
Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation
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DOI：
10.1088/0256-307x/34/7/078501
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发表时间：
2017-06
影响因子：
3.5
通讯作者：
Yize Wang;Chang Liu;Jianling Cai;Qiang Liu;Xinke Liu;Wenjie Yu;Qing-Tai Zhao
中科院分区：
文献类型：
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作者：
Yize Wang;Chang Liu;Jianling Cai;Qiang Liu;Xinke Liu;Wenjie Yu;Qing-Tai Zhao
