Electronic Energy States of Dislocations in CdS-Type Semiconductors
Electronic Energy States of Dislocations in CdS-Type Semiconductors
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DOI：
10.1103/physrev.173.803
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发表时间：
1968-09
期刊：
影响因子：
--
通讯作者：
R. Holmes;C. Elbaum
中科院分区：
文献类型：
--
作者：
R. Holmes;C. Elbaum
翻译后摘要：它表明，电子能带与宽禁带，化合物半导体中的位错。本文求解了CdS型晶体位错带边的本征值问题，计算了位错带的占位。费米能量，然后确定含有许多深的离散能级以及位错带的晶体。据预测，当晶体被适当的波长和强度增加的光照射时，控制电导率的热激活能通过一系列的能量平台，其等于离散能级的能量。在无位错的晶体中，这些平台通过阶跃变化连接，而在具有位错的晶体中，它们通过宽的过渡区连接。为了研究预测的热激活能测量作为光强度的函数在变形和未变形的CdS样品。在所有情况下，在0.80 ± 0.02 ev和0.66 ± 0.02 ev处观察到平台。在未变形样品的情况下，这些平台之间的过渡是尖锐的，而在变形样品的情况下，这些平台之间的过渡是宽的。这些结果证实了上述预测。（作者）
Abstract : It is shown that electronic energy bands are associated with dislocations in wide band gap, compound semiconductors. The eigenvalue problem for the dislocation band edge is solved for CdS type crystals, and the occupation of the band is calculated. The Fermi energy is then determined for crystals containing many deep lying discrete levels as well as dislocation bands. It is predicted that when a crystal is illuminated with light of appropriate wavelength and increasing intensity, the thermal activation energy governing the electrical conductivity passes through a series of energy plateaus which are equal to the energy of the discrete levels. In a dislocation free crystal, these plateaus are connected by step changes, while in a crystal with dislocations they are connected by broad transition regions. In order to study the predictions the thermal activation energy was measured as a function of light intensity in both deformed and undeformed samples of CdS. In all cases, plateaus at 0.80 plus or minus 0.02 ev and 0.66 plus or minus 0.02 ev were observed. The transition between these plateaus was sharp in the case of the undeformed samples and broad in the case of the deformed samples. These results confirm the predictions mentioned above. (Author)