Homoepitaxial growth of CVD diamond after ICP pretreatment
Homoepitaxial growth of CVD diamond after ICP pretreatment
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ICP 预处理后 CVD 金刚石同质外延生长
DOI：
10.1002/pssa.201532171
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Y. Drozdov
中科院分区：
文献类型：
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作者：
A. Muchnikov;A. L. Vikharev;J. Butler;V. Chernov;V. Isaev;S. Bogdanov;A. Okhapkin;P. Yunin;Y. Drozdov
研究了在微波等离子体辅助化学气相沉积（MPACVD）反应器中同质外延生长的邻位（100）金刚石单晶表面的表面形貌。由不同供应商生产的高压和高温（HPHT）单晶金刚石衬底用作衬底。在CVD生长之前，使用Ar/Cl 2气体混合物在单独的电感耦合等离子体/反应离子蚀刻（ICP/RIE）工具中对衬底进行机械抛光和蚀刻。检查（a）HPHT衬底的ICP蚀刻方案、（B）衬底抛光和（c）HPHT衬底取向差（离轴）邻位角对表面形态的影响。发现ICP蚀刻去除了块体中抛光引起的缺陷，并且还去除了抛光后留在单晶金刚石表面上的金刚石颗粒。在没有抛光缺陷的衬底上生长的同质外延CVD金刚石的表面形态不仅取决于生长过程的参数（衬底温度、气体混合物的组成、压力等），还取决于离轴角的值和方向。
The surface morphology of vicinal (100) single‐crystal diamond surfaces homoepitaxially grown in a microwave plasma‐assisted chemical vapor deposition (MPACVD) reactor is studied. High‐pressure and high‐temperature (HPHT) single‐crystal diamond substrates produced by different vendors are used as substrates. Prior to the CVD growth, substrates were mechanically polished and etched in a separate inductively coupled plasma/reactive ion etching (ICP/RIE) tool using an Ar/Cl2 gas mixture. The impact of (a) ICP etching regime of the HPHT substrate, (b) substrate polishing, and (c) the HPHT substrate misorientation (off‐axis) vicinal angle on the surface morphology is examined. It was found that the ICP etching removes polishing‐induced defects in the bulk and also removes diamond particles which are left on the surface of single‐crystalline diamond after polishing. The morphology of the surface of the homoepitaxial CVD diamond grown on a substrate, which is free of polishing defects, depends not only on the parameters of the growth process (substrate temperature, composition of the gas mixture, pressure, etc.), but also on the value and direction of the off‐axis angle.