Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown
Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown
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DOI：
10.7567/1882-0786/aafdb9
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发表时间：
2019-02-01
影响因子：
2.3
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Fukushima, Hayata;Usami, Shigeyoshi;Amano, Hiroshi
在GaN独立衬底上设计了一种结构简单、击穿电压高、漏电流小的垂直GaN p-n二极管。我们描述了一个垂直的p-n二极管与一个简单的边缘终端，有一个深和垂直蚀刻漂移层。器件仿真结果表明，随着蚀刻深度的增加，电场在器件边缘处更加松弛，在整个器件中均匀施加。我们制作了模拟结构，成功地降低了漏电流，提高了击穿电压。利用这种结构，可以观察到稳定的雪崩击穿。(C) 2019日本应用物理学会
A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics