Power-law response of metal oxide semiconductor gas sensors to oxygen in presence of reducing gases
Power-law response of metal oxide semiconductor gas sensors to oxygen in presence of reducing gases
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DOI：
10.1016/j.snb.2018.04.002
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发表时间：
2018-08-15
影响因子：
8.4
通讯作者：
Li, Erping
中科院分区：
文献类型：
--
作者：
Hua, Zhongqiu;Tian, Chen;Li, Erping
本研究对金属氧化物半导体气体传感器在还原气体存在下对氧气的幂律响应进行了理论和实验研究。在存在还原性气体的情况下，导出了对氧气的幂律响应的指数，这使我们能够成为揭示基本传感机制的有效探针。为了获得幂律指数，在还原气体存在的情况下计算了换能器和接收器函数。换能器功能建立在两种不同的传导机制上，即肖特基势垒模型和晶粒模型。利用氧气与不同浓度还原气体的质量作用定律计算了受体函数。在 CO 存在的情况下，SnO2 对氧气的功率响应已得到表征，结果与理论预期非常一致。 (C) 2018 Elsevier B.V. 保留所有权利。
This study presents a theoretical and experimental investigation on the power-law response to oxygen in the presence of reducing gases for metal oxide semiconductor gas sensors. In the presence of reducing gases, the exponents of power-law response to oxygen are derived, which allow us an effective probe to reveal the basic sensing mechanism. In order to obtain the power-law exponent, the transducer and receptor functions have been calculated in the presence of reducing gases. The transducer functions is built on two different conduction mechanisms, namely, Schottky barrier model and grain model. The receptor functions have been calculated by using the law of mass action for oxygen with different concentrations of reducing gases. The power response of SnO2 to oxygen has been characterized in the presence of CO and found to be well consistent with theoretical expectation. (C) 2018 Elsevier B.V. All rights reserved.