Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction
Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction
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DOI：
10.1021/acsami.8b14667
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发表时间：
2018-11-07
影响因子：
9.5
通讯作者：
Katayama, Mitsuhiro
中科院分区：
文献类型：
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作者：
Tabata, Hiroshi;Sato, Yuta;Katayama, Mitsuhiro
我们报告的货车德瓦尔斯异质结的气体传感特性的石墨烯和二硫化钼片。为了提取实际上源自异质结区域的响应，其他气体敏感部分被气体阻挡层钝化。石墨烯/MoS 2异质结器件在反向偏置条件下暴露于1 ppm NO2时表现出电阻的显著变化，其系数大于10（3），这被揭示为石墨烯/MoS 2界面处的肖特基势垒高度的调制的直接反映。的响应的幅度表现出强烈的依赖于偏置和背栅电压。反向偏压增加时的响应。相反，当在大的正向偏压或大的正背栅电压下测量时，它急剧下降。使用由石墨烯/MoS 2和反Ti/MoS 2肖特基二极管组成的金属-半导体-金属二极管模型分析了这些行为。
We report on the gas-sensing characteristics of a van der Waals heterojunction consisting of graphene and a MoS2 flake. To extract the response actually originating from the heterojunction area, the other gas-sensitive parts were passivated by gas barrier layers. The graphene/MoS2 heterojunction device demonstrated a significant change in resistance, by a factor of greater than 10(3), upon exposure to 1 ppm NO2 under a reverse-bias condition, which was revealed to be a direct reflection of the modulation of the Schottky barrier height at the graphene/MoS2 interface. The magnitude of the response demonstrated strong dependences on the bias and back-gate voltages. The response with increasing reverse bias. Conversely, it dramatically decreased when measured at a large forward bias or a large positive back-gate voltage. These behaviors were analyzed using a metal-semiconductor-metal diode model consisting of graphene/MoS2 and counter Ti/MoS2 Schottky diodes.